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Enhancement of flux pinning and high critical current density in graphite doped MgB_2 superconductor

机译:掺杂石墨的MgB_2超导体的磁通钉扎和高临界电流密度的增强

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We report the synthesis and characterization of graphite (C) doped MgB_(2-x)C_x (x=0.0, 0.1, 0.2, and 0.3) samples. The crystal structure and microstructural characterization have been investigated by x-ray diffractometer and transmission electron microscopic (TEM) analysis. The superconducting properties especially J_c and H_(c2) have been measured by employing physical property measurement system. We found that the graphite doping affects the lattice parameters as well as the microstructure of MgB_2 superconductor. In case of optimally doped (x=0.1) sample, the critical current density at 5 K corresponds to 1.1 × 10~6 and 5.3 × 10~4 A/cm~3for 3 and 5 T fields, respectively. The upper critical field has been enhanced nearly two times after doping. The flux pinning behavior has been investigated by flux pinning force density curve and it reveals that the flux pinning behavior has improved significantly by doping. TEM micrographs show the graphite nanoparticles of size ~5 - 10 nm which are invariably present in MgB_2 grains. These nanoparticles act as flux pinning center and are responsible for enhancement of superconducting properties of MgB_2.
机译:我们报告了石墨(C)掺杂MgB_(2-x)C_x(x = 0.0、0.1、0.2和0.3)样品的合成和表征。通过X射线衍射仪和透射电子显微镜(TEM)分析研究了晶体结构和微观结构。超导性能,特别是J_c和H_(c2)已经通过采用物理性能测量系统进行了测量。我们发现,石墨掺杂会影响MgB_2超导体的晶格参数以及微观结构。在最佳掺杂(x = 0.1)样品的情况下,在5 K下的临界电流密度分别对应于3和5 T场的1.1×10〜6和5.3×10〜4 A / cm〜3。掺杂后,上临界场提高了近两倍。通过磁通钉扎力密度曲线对磁通钉扎行为进行了研究,结果表明通过掺杂可以显着改善磁通钉扎行为。 TEM显微照片显示,尺寸约5-10 nm的石墨纳米粒子始终存在于MgB_2晶粒中。这些纳米粒子充当通量钉扎中心,并负责增强MgB_2的超导性能。

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