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Distinct doping dependence of critical temperature and critical current density in Ba1−xKxFe2As2 superconductor

机译:Ba1-xKxFe2As2超导体中临界温度和临界电流密度的不同掺杂依赖性

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摘要

Since the high transition temperature (High-Tc) superconductivity was discovered in the series of materials containing iron (Fe), their potential for the applications has been extensively scrutinized. In particular, a lot of effort has been made in achieving the high current-carrying ability by revealing the vortex pinning behavior. Here, we report on the critical current density (Jc) for the pristine Ba1−xKxFe2As2 single crystals with various K concentrations (0.25 ≤ x ≤ 0.52) determined by the magnetization hysteresis loop measurements. The x-dependence of Jc is characterized by a spike-like peak at x ~ 0.30, which corresponds to the under-doped region. This behavior is distinct from a moderate Tc dome with a broad maximum spanning from x ~ 0.3 to 0.5. For the under-doped samples, with increasing magnetic field (H), a second magnetization peak in Jc is observed, whereas for the optimally- and over-doped samples, Jc monotonically decreases with H. This result emphasizes that fine tuning of doping composition is important to obtain strong flux pinning. The origin of the characteristic doping dependence of Jc is discussed in connection with the orthorhombic phase domain boundary, as well as the chemical inhomogeneity introduced by the dopant substitutions.
机译:由于在一系列含铁(Fe)的材料中发现了高转变温度(High-Tc)超导性,因此对其应用潜力进行了广泛的研究。尤其是,通过揭示涡旋钉扎行为,在实现高载流能力方面付出了很多努力。在这里,我们报告了通过磁化磁滞回线测量确定的具有各种K浓度(0.25≤xx≤0.52)的原始Ba1-xKxFe2As2单晶的临界电流密度(Jc)。 Jc的x依赖性的特征在于在x〜0.30处的尖峰状峰,其对应于掺杂不足的区域。此行为与中等的Tc穹顶截然不同,该穹顶的最大值范围从x〜0.3到0.5。对于掺杂不足的样品,随着磁场(H)的增加,在Jc中观察到第二个磁化峰,而对于最佳掺杂和过量掺杂的样品,Jc随着H单调减少。这一结果强调了掺杂成分的微调对于获得强大的助焊剂固定很重要。结合正交晶相域边界以及掺杂剂取代引入的化学不均匀性,讨论了 J c 的特征性掺杂依赖性的起源。

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