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首页> 外文期刊>Scientific reports. >Distinct doping dependence of critical temperature and critical current density in Ba1?xKxFe2As2 superconductor
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Distinct doping dependence of critical temperature and critical current density in Ba1?xKxFe2As2 superconductor

机译:临界温度和临界电流密度在Ba1 xKxFe2as2超导体中的不同掺杂依赖性

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摘要

Since the high transition temperature (High-Tc) superconductivity was discovered in the series of materials containing iron (Fe), their potential for the applications has been extensively scrutinized. In particular, a lot of effort has been made in achieving the high current-carrying ability by revealing the vortex pinning behavior. Here, we report on the critical current density (Jc) for the pristine Ba1-xKxFe2As2 single crystals with various K concentrations (0.25?≤?x?≤?0.52) determined by the magnetization hysteresis loop measurements. The x-dependence of Jc is characterized by a spike-like peak at x?~?0.30, which corresponds to the under-doped region. This behavior is distinct from a moderate Tc dome with a broad maximum spanning from x?~?0.3 to 0.5. For the under-doped samples, with increasing magnetic field (H), a second magnetization peak in Jc is observed, whereas for the optimally- and over-doped samples, Jc monotonically decreases with H. This result emphasizes that fine tuning of doping composition is important to obtain strong flux pinning. The origin of the characteristic doping dependence of Jc is discussed in connection with the orthorhombic phase domain boundary, as well as the chemical inhomogeneity introduced by the dopant substitutions.
机译:由于在含有铁(Fe)的一系列材料中发现了高转变温度(高Tc)超导性,因此它们对应用的可能性已被广泛仔细审查。特别是,通过揭示涡旋钉扎行为来实现很多努力实现了高潮携带能力。这里,我们报告了通过磁化滞后回路测量确定的各种k浓度的原始Ba1-xkxfe2as2单晶的临界电流密度(Jc)。 JC的X依赖性的特征在于X·〜Δ0.30处的尖峰状峰,其对应于掺杂区域。这种行为与中等TC圆顶不同,具有从X X的广泛跨越跨越的广泛TC圆顶,从X〜?0.3到0.5。对于掺杂的诸如磁场(H)的欠掺杂样品,观察到JC中的第二磁化峰值,而对于最佳和过掺杂的样品,JC用H单调减少。该结果强调掺杂组合物的微调获得强助焊剂钉扎很重要。结合正交相位域边界讨论了JC的特征掺杂依赖性的来源,以及由掺杂剂取代引入的化学不均匀性。

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