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首页> 外文期刊>Journal of Applied Physics >Structural origin of the mobility enhancement in a pentacene thin-film transistor with a photocrosslinking insulator
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Structural origin of the mobility enhancement in a pentacene thin-film transistor with a photocrosslinking insulator

机译:具有光交联绝缘体的并五苯薄膜晶体管迁移率增强的结构起源

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We present the underlying mechanism for the mobility enhancement in a pentacene thin-film transistor (TFT) with a photocrosslinking polymeric insulator, poly(vinyl cinnamate) (PVCi). Experimental results for the optical anisotropy, x-ray diffraction, and microscopic layer-by-layer coverage of the pentacene film on the photocrosslinked PVCi layer, exposed to a linearly polarized ultraviolet (LPUV) light, clearly demonstrate the importance of the structural packing of pentacene grains rather than the directional alignment of the pentacene molecules for the mobility enhancement. The packing density of pentacene grains is directly related to the number of photocrosslinking sites of the PVCi insulator produced by the LPUV. It is found that the mobility in the pentacene TFT is linearly proportional to the number of photocrosslinked sites of the PVCi insulator serving as interaction sites for the layer-by-layer coverage of the pentacene molecules with no preferred orientation.
机译:我们介绍了并五苯薄膜晶体管(TFT)具有光交联聚合物绝缘体,聚乙烯基肉桂酸酯(PVCi)的迁移率提高的潜在机制。暴露于线性偏振紫外线(LPUV)的光致交联PVCi层上并五苯薄膜的光学各向异性,x射线衍射和逐层微观覆盖的实验结果清楚地证明了结构填充的重要性并五苯晶粒而不是并五苯分子的定向排列以提高迁移率。并五苯颗粒的堆积密度直接与LPUV生产的PVCi绝缘子的光交联位点数量有关。发现并五苯TFT中的迁移率与PVCi绝缘体的光交联位点的数目成线性比例,该PVCi绝缘子用作并五苯分子的层间覆盖的相互作用位点,没有优选的取向。

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