Preparation and properties of highly (100)-oriented Pb(Zr_(0.2)Ti_(0.8))O_3 thin film prepared by rf magnetron sputtering with a PbO_x buffer layer

摘要

A method for fabrication of highly (100)-oriented Pb(Zr_(0.2)Ti_(0.8))O_3 (PZT) thin films by rf magnetron sputtering with a special buffer of PbO_x (RFMS-SBP) was developed. With this method, highly (100)-oriented Pb(Zr_(0.2)Ti_(0.8))O_3 thin films were prepared on the PbO_x/Pt(111)/Ti/SiO_2/Si(100) substrates, and the preferential (100) orientation of the Pb(Zr_(0.2)Ti_(0.8))O_3 film is 92%. The (100) orientation of the PbO_x buffer layer leads to the (100) orientation of the PZT thin films, and the thickness of the buffer layer plays a significant role on the phase purity and electrical properties of the films. Highly (100)-oriented Pb(Zr_(0.2)Ti_(0.8))O_3 thin films with proper thickness of PbO_x buffer layer possess good electrical properties with larger remnant polarization P_r (69.7 μC/cm~2), lower coercive field E_c (92.4 kV/cm), and good pyroelectric coefficient at room temperature (2.6 X 10~(-8) C/cm~2 K). The butterfly-shaped ε-E characteristic curve gives the evidence of the improved in-plane ferroelectric property in the films.