Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well

摘要

Three different InAs quantum dots (QDs) in an InGaAs/GaAs quantum well were formed and investigated by time-resolved and temperature dependent photoluminescence (PL). A strong PL signal emitting at ～1.3 μm can be obtained at room temperature with a full width at half maximum of only 28 meV. Dots-in-a-well structures result in strong stress release and large size InAs QDs which lead to narrowing and redshifting of PL emissions, enhancement of carrier migration, increasing carrier density in QDs, achievement of good PL lifetime stability on temperature, and improving the QD quality.