Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs

摘要

We report bulk GalnNAs p-i-n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to ～1.3 μm. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10~(14)-10~(15) cm~(-3) was obtained in the samples. One of the samples with a 0.5 μm thick GalnNAs absorbing layer gave a responsivity of 0.11 AAV for a band edge of 1.28 μm at reverse bias of 2 V.