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Extrusion Formation Mechanism On Silicon Surface Under The Silica Cluster Impact Studied By Molecular Dynamics Simulation

机译:分子动力学模拟研究硅团簇冲击下硅表面的挤压成形机理

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Molecular dynamic simulation is applied in analyzing the deformation of silicon surface under the impact of large silica cluster. The mechanism of such a deformation is largely different from the cases of ion bombardment and indentation. With the impact of large silica cluster, the silicon surface is extruded due to the combinational effects of thermal spread, phase transformation, and crystallographic slip. It is found that thermal spread is the most significant one among these three effects. The extrusions on silicon surface will be in embryo during the impact unloading stage and will grow up during the cluster rebounding stage. Furthermore, the critical impact velocity to induce the formation of extrusions on silicon surface is associated with the incidence angle of the cluster, while it is independent from the size of the cluster. The findings are instructive in optimizing the process parameters for ultraprecision machining of silicon wafer.
机译:分子动力学模拟被用于分析大二氧化硅团簇的作用下硅表面的变形。这种变形的机理与离子轰击和压痕的情况大不相同。在大的二氧化硅簇的影响下,由于热扩散,相变和晶体滑移的综合作用,硅表面被挤出。发现热扩散是这三种效应中最重要的一种。硅表面上的挤压物将在冲击卸载阶段进入胚胎,并在团簇回弹阶段长大。此外,诱导在硅表面上形成突起的临界冲击速度与团簇的入射角相关,而与团簇的大小无关。这些发现对于优化硅晶片的超精密加工的工艺参数具有指导意义。

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