Electronic Structure Of The Indium Tin Oxideanocrystalline Anatase (tio_2)/ruthenium-dye Interfaces In Dye-sensitized Solar Cells

摘要

The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO_2 ("Gratzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO_2 and the TiO_2/cis-bis(isothiocyanato)bis(2,2' -bipyridyl-4,4' -dicarboxylato)-ruthenium(II)bis-tetrabutyl-ammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO_2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO_2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO_2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.