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Effect of ZnO Seed Layer and TiO_2 Coating Treatments on Aligned TiO_2/ZnO Nanostructures for Dye-Sensitized Solar Cells

机译:ZnO种子层和TiO_2涂层处理对染料敏化太阳能电池对准TiO_2 / ZnO纳米结构的影响

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A chemical bath deposition (CBD) method was applied to grow zinc oxide nanorod arrays on transparent conductive oxides acting as templates for the synthesis of TiO_2/ZnO nanostructures (TiO_2/ZNR) followed by HCl etching, and then these nanostructures were assembled as anodes in dye-sensitized solar cells. The ZnO nanorods, predominantly grew with good crystallinity along c-axis, exhibit wurtzite structure with smooth surface. Etching of the TiO_2/ZNR by HCl changes the most preferential crystal plane of ZnO from (002) to (100) and significantly increases the atomic ratio of Ti/Zn. Optical absorption measurements indicate a band gap energy of 3.1 eV for ZNR and TiO_2/ZNR. Increasing the spin coating time (SCT) of TiO_2 on ZNR increases the PL intensity. The seed layer number (SLN) of ZnO exerts moderate influence on the photo-to-electricity conversion and an optimum SLN was observed for this study.
机译:施加化学浴沉积(CBD)方法以使用作合成TiO_2 / ZnO纳米结构(TiO_2 / ZnR)的模板的透明导电氧化物的氧化锌纳米棒阵列,然后用HCl蚀刻,然后将这些纳米结构组装为阳极染料敏化太阳能电池。 ZnO纳米棒主要沿C轴增长,具有良好的结晶度,具有光滑表面的紫立岩结构。通过HCl蚀刻TiO_2 / ZnR从(002)到(100)改变ZnO最优先的晶面,并显着提高Ti / Zn的原子比。光学吸收测量表明ZNR和TiO_2 / ZnR为3.1eV的带隙能量。增加ZnR上TiO_2的旋涂时间(SCT)增加了PL强度。 ZnO的种子层数(SLN)对本研究观察到的光电转化率适度影响和最佳SLN。

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