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首页> 外文期刊>Journal of Applied Physics >Investigation Of The Effect Of In Situ Annealing Of Fept Nanodots Under High Vacuum On The Chemical States Of Fe And Pt By X-ray Photoelectron Spectroscopy
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Investigation Of The Effect Of In Situ Annealing Of Fept Nanodots Under High Vacuum On The Chemical States Of Fe And Pt By X-ray Photoelectron Spectroscopy

机译:X射线光电子能谱研究高真空状态下的小缝隙纳米点原位退火对Fe和Pt化学态的影响

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The chemical states of Fe and Pt in in situ annealed L1_0 structured FePt nanodots formed by self-assembled nanodot deposition method have been systematically investigated by angle resolved x-ray photoelectron spectroscopy. From the Fe_(3p) and the Pt_(4f) core level x-ray photoelectron (XP) spectra, it is evident that both the Fe and Pt of the nanodots were oxidized in the as-grown state. After the in situ annealing under high vacuum, a peak corresponding to metallic Fe begins to appear, and subsequently the metallic peak fraction increased with the increase in the annealing temperature. In line with this, the peak fraction of the respective oxides is drastically decreased. Irrespective of the annealing temperatures, it is inferred from the intensity of the XP spectrum that the Fe atom of the FePt nanodots is highly prone to oxidation than the Pt atom. Nevertheless, the valence band spectra of the as-grown FePt nanodot film clearly depict the presence of metallic Fe-Pt alloy. We would like to explain the results of the core level and valence band XP spectra as follows: only the peripheral Fe and Pt atoms of the as-formed FePt nanodots are bonded to the oxygen of the cosputtered SiO_2 matrix, whereas the metallic core of the as-formed FePt nanodots is always preserved. The very good vacuum ambient during postannealing highly promotes the dissociation of oxygen from the metal oxides via reduction reaction. This results into an increase in the fraction of metallic Fe and Pt at the periphery of FePt nanodots and the formation of high quality SiO_2 matrix after annealing. Similar results were also observed for the monatomic W as well as Pt nanodots embedded in SiO_2 matrix. Hence, this simple, rather effective method of in situ annealing of metal dots dispersed in an insulating matrix can be readily employed in the fabrication of high-density nanodot memory devices.
机译:通过角分辨X射线光电子能谱系统研究了通过自组装纳米点沉积法形成的原位退火的L1_0结构的FePt纳米点中Fe和Pt的化学态。从Fe_(3p)和Pt_(4f)核能级x射线光电子(XP)光谱可以看出,纳米点的Fe和Pt都在生长状态下被氧化。在高真空下原位退火之后,对应于金属Fe的峰开始出现,随后金属峰分数随退火温度的升高而增加。与此相应,各个氧化物的峰分数大大降低。与退火温度无关,从XP光谱的强度可以推断出FePt纳米点的Fe原子比Pt原子更容易氧化。然而,已生长的FePt纳米点薄膜的价带谱清楚地描述了金属Fe-Pt合金的存在。我们将解释核心能级和价带XP光谱的结果,如下所示:仅形成的FePt纳米点的外围Fe和Pt原子键合到共溅射的SiO_2基体的氧上,而FePt纳米点的金属核形成的FePt纳米点始终被保留。后退火过程中非常好的真空环境会极大地促进氧通过还原反应从金属氧化物中解离。这导致在FePt纳米点周围的金属Fe和Pt的比例增加,并在退火后形成高质量的SiO_2基体。对于嵌入在SiO_2基质中的单原子W和Pt纳米点,也观察到了相似的结果。因此,这种简单,相当有效的对分散在绝缘基体中的金属点进行原位退火的方法可以容易地用于制造高密度纳米点存储器件中。

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