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首页> 外文期刊>Journal of Applied Physics >Carrier concentration tuning of bandgap-reduced p-type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response
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Carrier concentration tuning of bandgap-reduced p-type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response

机译:通过铜和镓的共掺杂来调节带隙减小的p型ZnO薄膜的载流子浓度以改善光电化学反应

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摘要

In this study, the synthesis of p-type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O_2 gas ambient at room temperature, f
机译:在这项研究中,报道了通过铜和镓的共掺杂来合成具有相似带隙但载流子浓度不同的p型ZnO薄膜的方法。 ZnO:(Cu,Ga)薄膜是通过在室温,

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