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首页> 外文期刊>Journal of Applied Physics >Optimization of amorphous silicon thin film solar cells for flexible photovoltaics
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Optimization of amorphous silicon thin film solar cells for flexible photovoltaics

机译:用于柔性光伏的非晶硅薄膜太阳能电池的优化

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We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene-naphtalate (PEN). A substrate texture is used to scatter the light at each interface, which increases the light trapping in the active layer. In the first part, we investigate the relationship between the substrate morphology and the short circuit current, which can be increased by 20% compared to the case of flat substrate. In the second part, we investigate cell designs that avoid open-circuit voltage (V_(oc)) and fill factor (FF) losses that are often observed on textured substrates. We introduce an amorphous silicon carbide n-layer (n-SiC), a buffer layer at the n/i interface, and show that the new cell design yields high V_(oc) and FF on both flat and textured substrates. Furthermore, we investigate the relation between voids or nanocrack formations in the intrinsic layer and the textured substrate. It reveals that the initial growth of the amorphous layer is affected by the doped layer which itself is influenced by the textured substrate. Finally, the beneficial effect of our optical and electrical findings is used to fabricate a-Si:H solar cell on PEN substrate with an initial efficiency of 8.8% for an Mayer thickness of 270 nm.
机译:我们研究了n-i-p或基板配置中的非晶硅(a-Si:H)薄膜太阳能电池,该电池可使用非透明和柔性基板,例如金属或塑料箔,例如聚萘二甲酸乙二醇酯(PEN)。基板纹理用于在每个界面散射光,从而增加了在有源层中的光捕获。在第一部分中,我们研究了基板形态与短路电流之间的关系,与平坦基板的情况相比,短路电流可以增加20%。在第二部分中,我们研究了避免在网纹衬底上经常观察到的开路电压(V_(oc))和填充因子(FF)损耗的电池设计。我们引入了非晶碳化硅n层(n-SiC),即n / i界面处的缓冲层,并表明新的电池设计在平坦和有纹理的衬底上均产生了高V_(oc)和FF。此外,我们研究了本征层和纹理基底中的空隙或纳米裂纹形成之间的关系。它揭示了非晶层的初始生长受到掺杂层的影响,掺杂层本身受纹理化衬底的影响。最后,我们的光学和电学发现的有益效果被用于在PEN基板上制造a-Si:H太阳能电池,初始效率为8.8 nm,Mayer厚度为270 nm。

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