首页> 外文期刊>Journal of Applied Physics >Characterization of Pt/Bi_(3.15)Nd_(0.85)Ti_3O_(120/HfO_2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
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Characterization of Pt/Bi_(3.15)Nd_(0.85)Ti_3O_(120/HfO_2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

机译:使用氧化as作为铁电栅场效应晶体管的缓冲层表征Pt / Bi_(3.15)Nd_(0.85)Ti_3O_(120 / HfO_2 / Si结构)

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摘要

We have investigated the structural and electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with Bi_(3.15)Nd_(0.850Ti_3O_(19) (BNdT) thin film deposited on Si and hafnium oxide (HfO_2)/Si substrates. Microstructural analysis reveals the formation of well-crystallized BNdT perovskite film and good interface between BNdT film and HfO_2 buffer layer. Pt/BNdT/HfO_2/Si structure exhibits a memory window of 1.12 V at an operation voltage of 3.5 V. The width of memory window for the MFIS structure varies with increasing thickness of HfO_2 layer, and 4-nm-thickness is optimum. The results from the fatigue test indicate a slight degradation of the memory window after 10_(10) switching cycles. These properties are encouraging for the development of ferroelectric memory transistors.
机译:我们研究了具有Bi_(3.15)Nd_(0.850Ti_3O_(19)(BNdT)薄膜沉积在Si和氧化ha(HfO_2)/ Si衬底上的金属铁电绝缘体半导体(MFIS)电容器的结构和电性能。显微组织分析表明,形成了结晶良好的BNdT钙钛矿薄膜,BNdT薄膜与HfO_2缓冲层之间形成了良好的界面,Pt / BNdT / HfO_2 / Si结构在3.5V的工作电压下显示出1.12V的存储窗口。 MFIS结构的窗口随HfO_2层厚度的增加而变化,并且4nm的厚度是最佳的;疲劳测试的结果表明,在10_(10)个开关周期后,存储器窗口会略有退化,这些特性对于振奋人心是令人鼓舞的。铁电存储晶体管的开发。

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  • 来源
    《Journal of Applied Physics》 |2009年第11期|114117.1-114117.4|共4页
  • 作者单位

    Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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