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机译:硅衬底上有无MgO(001)缓冲层的Ba_(0.7)Sr_(0.3)TiO_3薄膜的折射率和厚度的确定
State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;
机译:在(001)SrTiO_3衬底上生长的La_(0.7)Sr_(0.3)MnO_3 / Ba_(0.7)Sr_(0.3)TiO_3 / La_(0.7)Sr_(0.3)MnO_3外延膜的微观结构
机译:在(001)LaAlO_3衬底上生长的Ba_(0.7)Sr_(0.3)TiO_3 / La_(0.7)Sr_(0.3)MnO_3外延膜中的螺纹位错
机译:在MgO(001)单晶衬底上生长的Ba_(0.7)Sr_(0.3)TiO_3薄膜中增强的面内铁电
机译:Ba_(0.7)Sr_(0.3)TiO_3 / MgO多层薄膜的可调谐铁电光子晶体
机译:GaAs(001)上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
机译:巨型能量收集潜力(100) - oriented 0.68pbmg1 / 3nb2 / 3o3-0.32pbtio3,具有pb(zr0.3ti0.7)O3 / pbox缓冲层和(001) - 剂量为0.67pbmg1 / 3nb2 / 3o3-0.33pbtio3薄膜