Electron-beam irradiation induced conductivity in ZnS nanowires as revealed by in situ transmission electron microscope

摘要

Electron transport variations in individual ZnS nanowires synthesized through a chemical vapor deposition process were in situ studied in transmission electron microscope under convergent electron-beam irradiation (EBI). It was found that the transport can dramatically be enhanced using proper irradiation conditions. The conductivity mechanism was revealed based on a detailed study of microstructure and composition evolutions under irradiation. EBI-induced Zn-rich domains' appearance and related O doping were mainly responsible for the conductivity improvements. First-principles theoretical calculations additionally indicated that the generation of midbands within a ZnS band gap might also contribute to the improved conductivity.