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Thickness-dependent dielectric and tunable properties of barium stannate titanate thin films

机译:钛酸钡钛酸盐薄膜的厚度依赖性介电和可调特性

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摘要

Barium stannate titanate Ba(Sn_(0.15)Ti_(0.85))O_3 (BTS) thin films with different thicknesses were grown by sol-gel process on single crystal LaAlO_3 (LAO) and Pt/Ti/SiO_2/Si substrates, respectively. Coplanar capacitance and parallel plate capacitance structure configurations were formed by preparing interdigital electrodes and parallel plate electrodes on BTS thin films. Both of the films exhibited an enhanced dielectric constant and tunability as the film thickness increases but these two cases are actually based on different mechanisms. The thickness dependent dielectric properties of the films deposited on Pt/Ti/SiO_2/Si substrates were mainly attributed to the "dead layer" effect while those of the films grown on LAO substrates were due to strain and grain size of the films.
机译:通过溶胶-凝胶法分别在单晶LaAlO_3(LAO)和Pt / Ti / SiO_2 / Si衬底上生长了具有不同厚度的钛酸钡钛酸盐Ba(Sn_(0.15)Ti_(0.85))O_3(BTS)薄膜。通过在BTS薄膜上制备叉指电极和平行板电极来形成共面电容和平行板电容结构配置。随着膜厚度的增加,两种膜均表现出增强的介电常数和可调性,但是这两种情况实际上是基于不同的机理。沉积在Pt / Ti / SiO_2 / Si衬底上的薄膜的厚度相关介电特性主要归因于“死层”效应,而在LAO衬底上生长的薄膜的介电特性则归因于薄膜的应变和晶粒尺寸。

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  • 来源
    《Journal of Applied Physics》 |2009年第2期|024104.1-024104.5|共5页
  • 作者单位

    Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai, China;

    Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai, China;

    Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai, China;

    Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai, China;

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong;

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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