首页> 外文期刊>Journal of Applied Physics >Quantum confinement effect on the effective mass in two-dimensional electron gas of AIGaN/GaN heterostructures
【24h】

Quantum confinement effect on the effective mass in two-dimensional electron gas of AIGaN/GaN heterostructures

机译:量子约束对AIGaN / GaN异质结构二维电子气中有效质量的影响

获取原文
获取原文并翻译 | 示例
           

摘要

We report the results of direct measurements and a theoretical investigation of the in-plane effective mass in the two-dimensional electron gas of nominally undoped AIGaN/GaN heterostructures with a different degree of quantum confinement. It is shown that in most cases the conduction band nonparabolicity effect is overestimated and the electron wave-function penetration into the barrier layer should be taken into account. The contribution of the wave-function hybridization is determined to play the dominant role. The band edge effective mass value is deduced to be (0.2±0.01)m_0.
机译:我们报告了直接测量的结果以及具有不同量子约束程度的名义上未掺杂的AIGaN / GaN异质结构的二维电子气中面内有效质量的理论研究。结果表明,在大多数情况下,导带的非抛物线效应被高估了,应考虑电子波函数穿透进入势垒层的情况。波函数杂交的贡献被确定为起主导作用。频带边缘有效质量值推导为(0.2±0.01)m_0。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第1期|222-227|共6页
  • 作者单位

    Institut fuer Bio- und Nanosysteme and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich, Juelich D-52425, Germany;

    Institut fuer Bio- und Nanosysteme and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich, Juelich D-52425, Germany;

    Institut fuer Bio- und Nanosysteme and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich, Juelich D-52425, Germany;

    Institut fuer Bio- und Nanosysteme and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich, Juelich D-52425, Germany;

    Institut fuer Bio- und Nanosysteme and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Juelich, Juelich D-52425, Germany;

    Centre de Recherche sur I'Heteroepitaxie et ses Applications, CNRS, rue Bernard Gregory, F-06560 Valbonne, France;

    Institute of Semiconductor Physics, NASU, Pr. Nauki 45, 03028 Kiev, Ukraine;

    Institute of Semiconductor Physics, NASU, Pr. Nauki 45, 03028 Kiev, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号