机译:拉曼散射探测从硅转移到铜上的InGaN / GaN垂直发光二极管中的温度上升
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR),3 Research Link, Singapore 117602;
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR),3 Research Link, Singapore 117602;
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR),3 Research Link, Singapore 117602;
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR),3 Research Link, Singapore 117602;
AZZVRRO Semiconductors AG, Universitaetsplatz 2, 39016 Magdeburg, Germany and Institut fuer Experimentelle Physik, Fakultaet fuer Naturwissenschaften, Otto-von-Guericke-Universitaet Magdeburg, Universitaetsplatz 2, 39016 Magdeburg, Germany;
AZZVRRO Semiconductors AG, Universitaetsplatz 2, 39016 Magdeburg, Germany and Institut fuer Experimentelle Physik, Fakultaet fuer Naturwissenschaften, Otto-von-Guericke-Universitaet Magdeburg, Universitaetsplatz 2, 39016 Magdeburg, Germany;
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR),3 Research Link, Singapore 117602;
机译:电镀铜上的InGaN / GaN垂直发光二极管的温度和热特性
机译:在绝缘体上硅衬底上使用GaN的薄膜InGaN / GaN垂直发光二极管
机译:硅衬底上绿色发光二极管InGaN / GaN型阱的相同温度GaN帽的影响
机译:IngaN / GaN多量子阱用硅三角形掺杂在GaN屏障中发光二极管
机译:InGaN / GaN发光二极管热性能的调查分析
机译:等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
机译:具有InGaN保护层的InGaN / GaN垂直发光二极管的增强发光