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机译:AlGaN量子阱基深紫外发光二极管降解的光学研究
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden;
School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden;
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA;
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA;
Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA;
Department of Electrical, Computer, and Systems Engineering, Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
机译:蓝宝石上基于AlGaN的280 nm深紫外发光二极管中的光功率衰减机制
机译:通过在p-AlGaN接触层上使用高反射光子晶体实现高外部量子效率(10%)的基于AlGaN的深紫外发光二极管
机译:通过不对称阶梯状AlGaN量子阱改善基于AlGaN的深紫外发光二极管的性能
机译:有源区中具有渐变量子结构的AlGaN基深紫外发光二极管的优势
机译:氮化铝镓基多量子阱深紫外发光二极管的降解机理。
机译:在基于AlGaN的深紫外发光二极管的p-AlGaN / n-AlGaN / p-AlGaN电流扩散层上
机译:基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层