机译:交换耦合的硬-软三层中依赖于厚度的磁逆过程和磁滞回线
College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;
College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;
School of Materials Science and Engineering, Nanyang Technological University, N4.1, 50 Nanyang Avenue, Singapore 639798;
Department of Physics, National University of Singapore, Singapore 117542;
College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China;
机译:FePt / a-Fe / FePt三层中的磁逆过程和临界厚度
机译:在反铁磁交换耦合的硬/软/硬三层结构中从可逆的磁性交换弹簧过程过渡到不可逆的磁性交换过程
机译:次磁滞回线上钢磁化反转引起的磁滞比磁损耗密度的计算和分析
机译:由转换电子Mössbauer光谱磁滞回线确定的Fe / FeMn交换偏置双层中取决于深度的磁化反转
机译:使用磁滞回线和磁传输量测量的磁性耦合氧化钴(II)/钴双层中的交换偏压。
机译:反铁磁性IrMn层的厚度对弱耦合CoFeB / IrMn / CoFeB三层的静态和动态磁化强度的影响
机译:磁性反转过程和临界厚度 Fept / {\ alpha} -Fe / Fept三层