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Thickness dependent magnetic reversal process and hysteresis loops in exchange-coupled hard-soft trilayers

机译:交换耦合的硬-软三层中依赖于厚度的磁逆过程和磁滞回线

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摘要

The demagnetization process of a hard/soft/hard sandwich has been investigated systematically within a self-contained micromagnetic model, with particular attention on the cases with small hard layer thickness. The microscopic and macroscopic hysteresis loops, as well as the angular distributions of the magnetization between nucleation and pinning have been obtained numerically, with the formula for the nucleation field derived. It is found that both nucleation and pinning fields, as well as the gap in between decrease as the hard layer thickness reduces. The hard layer thickness has great effect on the hysteresis loops only when the thickness is very small, where the hysteresis loop is nearly square and the dominant coercivity mechanism is the nucleation. The thickness regions at which the theoretical and practical giant energy products can be achieved have been discussed. In most cases, the hard layer can be taken as sufficiently thick so that the magnetization at its surface obeys a simple coherent rotation model. In these cases, the calculation can be simplified significantly, with only the influence of the soft layer thickness accounted.
机译:硬/软/硬夹层的退磁过程已在独立的微磁模型中进行了系统研究,尤其是在硬层厚度较小的情况下。通过数值计算获得了微观和宏观磁滞回线,以及成核和钉扎之间磁化的角度分布,并推导了成核场的公式。发现随着硬层厚度的减小,形核场和钉扎场以及两者之间的间隙都减小。硬层的厚度只有在厚度很小时才对磁滞回线有很大的影响,此时磁滞回线几乎是正方形,并且主要的矫顽力机制是成核作用。已经讨论了可以实现理论和实际的巨型能量积的厚度区域。在大多数情况下,硬层可以采取足够的厚度,以使其表面的磁化服从简单的相干旋转模型。在这些情况下,仅考虑软层厚度的影响,就可以显着简化计算。

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  • 来源
    《Journal of Applied Physics》 |2010年第9期|p.093928.1-093928.8|共8页
  • 作者单位

    College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    School of Materials Science and Engineering, Nanyang Technological University, N4.1, 50 Nanyang Avenue, Singapore 639798;

    Department of Physics, National University of Singapore, Singapore 117542;

    College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610066, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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