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机译:碳化硅上二十面体砷化硼薄膜的热导率和塞贝克系数
H.H. Wills Physics Laboratory, Centre for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL, United Kingdom;
rnDepartment of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11794-2275, USA;
rnDepartment of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11794-2275, USA;
rnDepartment of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA;
rnDepartment of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA;
rnInterface Analysis Centre, University of Bristol, Bristol BS2 8BS, United Kingdom;
rnH.H. Wills Physics Laboratory, Centre for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL, United Kingdom;
机译:碳化硼的电导率和塞贝克系数:软化双极子跳跃-艺术。没有。 054302
机译:碳化硼的电导率和塞贝克系数:软化双极子跳跃-艺术。没有。 054302
机译:高密度系数和低电阻率的纳米晶碳化硅膜的制备
机译:Cufese_2薄膜的跨平面塞贝克系数和导热系数
机译:二十面体砷化硼在碳化硅衬底上的外延生长:改进的工艺条件和电性能
机译:在表面小于50nm的硅膜中根据表面粗糙度效应定制塞贝克系数
机译:砷化硼(B12As2)在25°C至850°C之间的热膨胀系数