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机译:GalnN发光二极管和激光二极管的热性能分析
Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
机译:偏振匹配的GalnN / GalnN多量子阱发光二极管的效率下降,正向电压,理想因数和波长偏移的减少
机译:生长在具有不同位错密度的基板上的发射紫光的GalnN发光二极管的效率和非热翻转
机译:GalnN发光二极管的正向电压特性与温度的关系分析
机译:GalnN半导体二极管激光器产生的高峰值功率皮秒光脉冲
机译:高功率二极管激光器阵列的热管理,光束控制和封装设计,以及二极管激光器阵列抽运的棒状激光器的泵浦腔设计。
机译:具有热活化延迟荧光性能的π缀合的三合官能摩刺衍生物的合理设计用于应用于有机发光二极管的应用
机译:有机发光二极管:通过采用由1,8-萘二亚胺杂交物组成的热活化延迟荧光发射器来实现橙红色有机发光二极管的近30%的外量子效率(ADV。Mater。5/2018)
机译:具有和不具有光束整形光学的紫外发光二极管(LED)Engin LZ4-00Ua00二极管的远场辐射图分析。