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首页> 外文期刊>Journal of Applied Physics >Absorption enhancement analysis of crystalline Si thin film solar cells based on broadband antireflection nanocone grating
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Absorption enhancement analysis of crystalline Si thin film solar cells based on broadband antireflection nanocone grating

机译:基于宽带减反射纳米锥光栅的晶体硅薄膜太阳能电池吸收增强分析

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摘要

1 μm thick Si solar cells based on nanocone grating (NCG) with height of 100-800 ran and period of 100, 500, and 800 nm are numerically investigated through reflectivities, absorption enhancement factors, absorption spectra, optical generation rates, ultimate efficiencies, and diffraction angles. Compared with the planar Si solar cell, absorption enhancement are observed in any solar cells with NCG surface. Their absorption enhancement mechanism varies with the incident wavelength range. When incident wavelength λ<500nm, antireflection of their front surface dominates the absorption enhancement behavior due to their stronger absorption coefficients. When 600nm>λ>500nm, even though the absorption enhancement is still dominated by antireflection of the front surface, cavity-resonance effect and guided-mode excitation induced by high order diffraction start to make contribution. When λ > 600 nm, the contribution of guided-mode excitation induced by lower-order diffraction becomes larger and larger once the diffraction angle is larger than its critical angle. For the structure with P= 100nm, high-order diffraction cut-off at the longer wavelength range is the main reason of its lower absorption enhancement and ultimate conversion efficiency. For P=800nm, the lower absorption enhancement and ultimate efficiency is also observed due to the high reflection loss and mode leakage induced by 1st order diffraction where its diffraction angle is lower than its critical angle. Higher absorption and ultimate conversion efficiencies are achieved in P = 500 nm due to the good balance between antireflection performance and guide-mode excitation induced by the high order diffraction is achieved. Moreover, such absorption enhancement is closely related with its height of NCG gratings. Reflection loss reduction, the interaction volume reduction between the incident light and Si material, and higher photon density in NCG structure coexists with H increasing, which results in absorption enhancement in P = 500 nm and P = 800 nm, but absorption reduction in P= 100 nm where high order diffraction cut-off. Based on these analysis, we do believe that high absorption and ultimate conversion efficiency should be achieved in NCG-based solar cells where both the lower reflection in short wavelength domain and guide-mode excitation induced by 1st and 2nd diffraction in longer wavelength domain can be achieved. According to this rule; the optimized structure is NCG with P = 559 nm and H = 500 nm, by which, the highest optical generation rate of 536.57 × 10~4W/cm~3 and ultimate efficiency of 28.132% are achieved. Such analysis should benefit the design of the thin film solar cells with nano-structured diffraction gratings.
机译:通过反射率,吸收增强因子,吸收光谱,光学产生率,极限效率,基于纳米锥光栅(NCG)的高度为100-800纳米,周期为100、500和800 nm的1μm厚硅太阳能电池进行了数值研究和衍射角。与平面硅太阳能电池相比,在任何具有NCG表面的太阳能电池中均观察到吸收增强。它们的吸收增强机制随入射波长范围而变化。当入射波长λ<500nm时,由于其吸收系数更强,它们的前表面的抗反射作用主导了吸收增强行为。当600nm>λ> 500nm时,即使吸收增强仍由前表面的抗反射控制,腔共振效应和由高阶衍射引起的导模激发也开始起作用。当λ> 600 nm时,一旦衍射角大于其临界角,则由低阶衍射引起的导模激发的贡献就变得越来越大。对于P = 100nm的结构,在较长波长范围内的高阶衍射截止是其吸收增强和最终转换效率较低的主要原因。对于P = 800nm,由于一阶衍射引起的高反射损耗和模式泄漏,其衍射角小于临界角,因此还观察到了较低的吸收增强和最终效率。由于在抗反射性能和由高阶衍射引起的导模激发之间达到了良好的平衡,因此在P = 500 nm处实现了更高的吸收和最终转换效率。而且,这种吸收增强与其NCG光栅的高度密切相关。反射损失的减少,入射光与硅材料之间的相互作用体积的减少以及NCG结构中较高的光子密度与H并存,导致P = 500 nm和P = 800 nm的吸收增强,而P = 500 nm的吸收减少。高阶衍射截止波长为100 nm。基于这些分析,我们相信应该在基于NCG的太阳能电池中实现高吸收和最终转换效率,其中短波长域中的较低反射和较长波长域中的第1和第2衍射引起的引导模式激发都可以实现。实现。按照这个规则优化后的结构为P = 559 nm和H = 500 nm的NCG,从而实现了最高的光产生速率536.57×10〜4W / cm〜3,最终效率为28.132%。这种分析应该有益于具有纳米结构的衍射光栅的薄膜太阳能电池的设计。

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  • 来源
    《Journal of Applied Physics》 |2011年第11期|p.113105.1-113105.8|共8页
  • 作者单位

    Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-devices, Chinese Academy of Sciences, Suzhou 215123, China;

    Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-devices, Chinese Academy of Sciences, Suzhou 215123, China,Department of Physics, Shanghai University, Shanghai 130012, China;

    Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-devices, Chinese Academy of Sciences, Suzhou 215123, China;

    Department of Physics, Shanghai University, Shanghai 130012, China;

    Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-devices, Chinese Academy of Sciences, Suzhou 215123, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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