Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars

摘要

Light extraction efficiency improvement and strain relaxation were observed in InGaN/GaN multiple quantum well (MQW) nanopillars. InGaN/GaN MQW-based LED nanopillar arrays with different diameters varying from about 120 to 250 nm were fabricated via inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. The ray trace method and TiberCAD were used to calculate the light extraction efficiency and strain relaxation in the nanopillars. Remarkably improved light extraction efficiency and strain relaxation were obtained from the calculation results in the nanopillar structures.