首页> 外文期刊>Journal of Applied Physics >Relaxor behavior and dielectric relaxation in Pb(Ba_(1/3)Nb_(2/3))O_3: A phase pure new relaxor material
【24h】

Relaxor behavior and dielectric relaxation in Pb(Ba_(1/3)Nb_(2/3))O_3: A phase pure new relaxor material

机译:Pb(Ba_(1/3)Nb_(2/3))O_3中的弛豫行为和介电弛豫:纯相新弛豫材料

获取原文
获取原文并翻译 | 示例

摘要

Pb(Ba_(1/3)Nb_(2/3))O_3 was prepared by two steps solid state reaction route. Material stabilized in orthorhombic perovskite phase with lattice constants a=4.0849(3) ?, b=11.8469(4) ?, and c = 10.6818(9) ?. The scanning electron micrograph exhibits heterogeneous grain distribution with average grain size of 1-3 μm. Temperature dependent dielectric constant exhibits a broad peak at 316 K (ε_m=2250) that shows frequency dependent shifts toward higher temperature-typical relaxor behavior. Modified Curie-Weiss law is used to fit the dielectric data that exhibits almost complete diffuse phase transition characteristics. The dielectric relaxation obeys the Vogel-Fulcher relationship with the freezing temperature 286 K. In addition to relaxation observed due to transformation of the material into ergodic relaxor phase below Burn temperature, significant dielectric dispersion is observed in low frequency regime in both components of dielectric response and a small dielectric relaxation peak is observed in the temperature range (423-598 K) that is associated with defect related hopping process. Cole-Cole plots indicate polydispersive nature of this dielectric relaxation; the relaxation distribution increasing with temperature.
机译:通过两步固相反应路线制备Pb(Ba_(1/3)Nb_(2/3))O_3。稳定在正交晶钙钛矿相中的材料,其晶格常数为a = 4.0849(3),b = 11.8469(4),c = 10.6818(9)。扫描电子显微镜照片显示出不均匀的晶粒分布,平均晶粒尺寸为1-3μm。与温度有关的介电常数在316 K(ε_m= 2250)处显示一个宽的峰,该峰显示出与频率有关的向较高温度(典型的弛豫行为)的偏移。修改后的居里-魏斯定律用于拟合呈现几乎完整的扩散相变特性的介电数据。介电弛豫在冻结温度286 K时符合Vogel-Fulcher关系。除了观察到由于材料转变为燃烧温度以下的遍历弛豫相而引起的弛豫外,在低频范围内介电响应的两个分量中均观察到显着的介电色散在与缺陷相关的跳变过程相关的温度范围(423-598 K)中观察到小的介电弛豫峰。科尔-科尔图表明了这种介电弛豫的多分散性。弛豫分布随温度增加而增加。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第1期|p.014114.1-014114.5|共5页
  • 作者单位

    Department of Pure and Applied Physics, Advance Material Research Laboratory,Guru Ghasidas Vishwavidyalaya, Bilaspur 495009, India;

    Department of Pure and Applied Physics, Advance Material Research Laboratory,Guru Ghasidas Vishwavidyalaya, Bilaspur 495009, India;

    Department of Pure and Applied Physics, Advance Material Research Laboratory,Guru Ghasidas Vishwavidyalaya, Bilaspur 495009, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号