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Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

机译:半导体基板上的铁氧体膜向微波和毫米波集成电路的生长

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摘要

1%It is widely recognized that as electronic systems' operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.
机译:1%众所周知,随着电子系统的工作频率转移到微波和毫米波波段,铁氧体无源器件与半导体固态有源器件的集成在改善小型化,带宽,速度,功耗和生产成本等方面具有显着优势。其他。传统上,尽管尝试将铁氧体作为薄膜集成在微波集成电路中,但铁氧体却以离散的块状形式使用。技术障碍仍然是铁氧体与半导体材料及其处理协议之间不兼容的中心。在本文中,我们介绍了过去和现在在与半导体平台进行铁氧体集成方面所做的努力,目的是确定实现片上铁氧体与半导体器件,组件和系统的完整集成的最有希望的途径。

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  • 来源
    《Journal of Applied Physics》 |2012年第8期|081101.1-081101.11|共11页
  • 作者

    Z.Chen; V.G.Harris;

  • 作者单位

    Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts, 02115, USA,Xtreme Technology Laboratory Intel Corp, Santa Clara, California 95050, USA;

    Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts, 02115, USA,Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts, 02115, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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