机译:长寿命电子在调制掺杂(100)GaAs量子阱中自旋
Author to whom correspondence should be addressed;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602, USA;
机译:调制掺杂GaAs / AlGaAs量子阱中电子和空穴自旋动力学的时间分辨研究
机译:n型调制掺杂的AIGaAs / GaAsBi量子阱结构中的电子传输:Bi和热退火对电子有效质量和电子迁移率的影响
机译:N型调制掺杂Algaas / Gaasbi量子井结构的电子传输:Bi和热退火对电子有效质量和电子迁移的影响
机译:p调制掺杂的GaAs-AlGaAs单量子阱中空穴自旋激发的非弹性光散射
机译:掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
机译:GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性
机译:调制掺杂(100)Gaas量子阱中的长寿命电子自旋
机译:具有插入的薄alas势垒的调制掺杂alGaas / Gaas / alGaas量子阱中电子迁移率的大幅增加。