Current-induced domain wall motion in a multilayered nanowire for achieving high density bit

摘要

We herein propose a multilayered nanowire in order to achieve a high density bit or short bit length. The multilayered nanowire consists of a continuous layer and a granular layer which are coupled by interlayer exchange and magnetostatic interactions. The continuous layer has a role of data transfer based on current-induced domain wall motion (CIDWM). The granular layer has a role of stabilizing data, and the current flows only through the continuous layer. We demonstrate CIDWM in the multilayered nanowire by micromagnetic simulation. The domain wall width in the multilayered nanowire is narrower than that of the single-layer nanowire because of weak exchange coupling in the granular layer. As a result, the smaller bit length can be obtained in the multilayered nanowire. Moreover, the critical current density in the multilayered nanowire almost equals to the critical current density of the single-layer nanowire with the same domain wall width as that of the multilayered nanowire.