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(07D314) Current-induced domain wall motion in a multilayered nanowire for achieving high density bit

机译:(07D314)多层纳米线中的电流诱导的畴壁运动,用于实现高密度塔

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We herein propose a multilayered nanowire in order to achieve a high density bit or short bit length. The multilayered nanowire consists of a continuous layer and a granular layer which are coupled by interlayer exchange and magnetostatic interactions. The continuous layer has a role of data transfer based on current-induced domain wall motion (CIDWM). The granular layer has a role of stabilizing data, and the current flows only through the continuous layer. We demonstrate CIDWM in the multilayered nanowire by micromagnetic simulation. The domain wall width in the multilayered nanowire is narrower than that of the single-layer nanowire because of weak exchange coupling in the granular layer. As a result, the smaller bit length can be obtained in the multilayered nanowire. Moreover, the critical current density in the multilayered nanowire almost equals to the critical current density of the single-layer nanowire with the same domain wall width as that of the multilayered nanowire.
机译:我们在本文中提出了一种多层纳米线,以实现高密度钻头或短比特长度。多层纳米线由连续层和颗粒层组成,颗粒层由层间交换和磁静态相互作用耦合。连续层基于电流诱导的域壁运动(CIDWM)具有数据传输的作用。粒状层具有稳定数据的作用,电流仅通过连续层流动。通过微磁性模拟,我们在多层纳米线中展示了CidWM。由于颗粒层中的弱交换耦合,多层纳米线中的畴壁宽度比单层纳米线的宽度窄。结果,可以在多层纳米线中获得较小的比特长度。此外,多层纳米线中的临界电流密度几乎等于单层纳米线的临界电流密度,其具有与多层纳米线相同的畴壁宽度。

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