Surface fingerprints of individual silicon nanocrystals in laser-annealed Si/SiO_2 superlattice: Evidence of nanoeruptions of laser-pressurized silicon

摘要

Silicon nanocrystals prepared by continuous-wave laser annealing of a free-standing Si/SiC＞2 superlattice are studied for the first time by using methods of surface analysis (scanning electron microscopy and atomic force microscopy). The surface topology and composition are compared with transmission electron microscopy images that show a projection through the whole film, allowing us to discriminate silicon nanocrystals located near the film surface. These nanocrystals have an unusual pear-like shape with the thinner part sticking out of the laser-illuminated surface. The non-spherical shape of these nanocrystals is explained by eruption of silicon pressurized at the stage of crystallization from the melt phase. This hypothesis is supported by the micro-Raman spectra which show low stress near the surface features, in contrast to the neighbouring regions having high compressive stress.