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首页> 外文期刊>Journal of Applied Physics >Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes
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Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

机译:溅射的六硼化镧薄膜厚度对金属刀口阴极场发射的影响

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摘要

We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB_6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB_6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB_6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB_6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB_6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 10~(18) cm~(-3)) free carrier density in the sputtered polycrystalline LaB_6.
机译:我们报告了对金属刀刃型阴极进行场发射的实验和分析,这些阴极溅射镀有低功函数材料的六硼化镧(LaB_6)薄膜。发现发射电流敏感地取决于LaB_6层的厚度。我们发现,比10 nm薄的薄膜大大增强了发射电流。然而,观察到涂覆有较厚的LaB_6层的阴极比未涂覆的金属阴极发射的电流更少。由于裸金属阴极的更高的功函,该结果是出乎意料的。我们基于对整个结构的静电势的数值计算表明,对于薄涂层和厚涂层,未涂覆样品的外部(LaB_6 /真空)势垒均降低了。但是,内部(金属/ LaB_6)势垒没有表现出这种行为。在薄涂层的样品中,电子有效地通过内部和外部势垒隧穿,从而导致电流相对于未涂层的情况有所增强。相反,尽管外部势垒降低了,但是在厚涂层的样品中较厚的内部势垒却将电流抑制到未涂覆样品的值以下。我们认为这种涂层厚度的变化是由于溅射的多晶LaB_6的自由载流子密度较低(不超过10〜(18)cm〜(-3))。

著录项

  • 来源
    《Journal of Applied Physics》 |2012年第6期|p.063717.1-063717.6|共6页
  • 作者单位

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison,Wisconsin 53706, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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