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首页> 外文期刊>Journal of Applied Physics >The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi_5Ti_3FeO_(15) multiferroic ceramics
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The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi_5Ti_3FeO_(15) multiferroic ceramics

机译:Cr替代浓度对Aurivillius Bi_5Ti_3FeO_(15)多铁陶瓷的结构,电磁行为的影响

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摘要

Aurivillius Bi_5Ti_3FeO_(15) (BTFO) multiferroic ceramics with different Cr-doped concentrations have been synthesized by the conventional solid state reaction method. The influences of Cr-doping concentrations on the structural, magnetic, dielectric, and ferroelectric properties of BTFO ceramics are investigated in detail. All these sintered Cr-substituted BTFO ceramics are determined to be layered perovskite Aurivillius structure by X-ray diffraction, as well as the lattice parameters a, b, and c are in good accordance with Vegard's law along with the Cr-doping concentration. The lattice distortion a/b for Aurivillius family decreases with increasing Cr-doping concentration. Moreover, Cr-doping can promote greatly the grain growth of BTFO samples confirmed from field emission scanning electron microscopy characterization. However, no obvious signs of the improvement in ferroelectric properties are found in Cr-doped BTFO ceramics, and abnormal ferroelectric polarization versus electric field (P-E) loops are observed as Cr-doping content is beyond 0.1. Similar ε (tanδ) versus frequency plots to those of the BTFO sample are exhibited when Cr-doping concentration is less than 0.1. Nevertheless, obvious dielectric dispersion phenomena are shown as the Cr-doping concentration is beyond 0.1, and this dispersion behavior becomes strong with further increasing Cr-doping concentration, which are clearly indicated by the appearance of dielectric loss relaxation peaks in the measurement frequency from 10~2 Hz to 10~6 Hz. In addition, the corresponding frequency to relaxation peak shifts towards high frequencies with the Cr-doping concentration. Finally, the same magnetic orderings for all these Cr-doped BTFO ceramics as those of the BTFO one, i.e., superparamagnetic state dominated with antiferromagnetic interaction, are unambiguously found, signifying that the predicted Fe~(3+)-O-Cr~(3+) 180° ferromagnetic superexchange interaction based on the Goodenough-Kanamori (G-K) rule might not be achieved in BTFO ceramics through Cr substitution by the conventional solid state reaction.
机译:采用常规固相反应法合成了不同Cr掺杂浓度的Aurivillius Bi_5Ti_3FeO_(15)(BTFO)多铁陶瓷。详细研究了Cr掺杂浓度对BTFO陶瓷的结构,磁性,介电和铁电性能的影响。通过X射线衍射确定所有这些烧结的Cr-取代的BTFO陶瓷都是层状钙钛矿Aurivillius结构,并且晶格参数a,b和c与Cr掺杂浓度很好地符合Vegard定律。 Aurivillius族的晶格畸变a / b随着Cr掺杂浓度的增加而降低。而且,通过场发射扫描电子显微镜表征证实,Cr掺杂可以大大促进BTFO样品的晶粒长大。但是,在掺铬的BTFO陶瓷中,没有发现铁电性能改善的明显迹象,并且当Cr掺杂含量超过0.1时,观察到异常的铁电极化对电场(P-E)回路。当Cr掺杂浓度小于0.1时,会显示出与BTFO样品相似的ε(tanδ)与频率曲线图。然而,当Cr掺杂浓度超过0.1时,显示出明显的介电色散现象,并且随着Cr掺杂浓度的进一步增加,这种色散行为变得很强,这可以从测量频率从10开始出现的介电损耗弛豫峰清楚地表明。 〜2 Hz至10〜6 Hz。此外,弛豫峰的相应频率随着Cr掺杂浓度向高频移动。最后,所有这些Cr掺杂BTFO陶瓷的磁序与BTFO陶瓷相同,即以反铁磁相互作用为主的超顺磁态,这表明预测的Fe〜(3 +)-O-Cr〜( 3+)在BTFO陶瓷中,通过传统的固态反应取代Cr可能无法实现基于Goodenough-Kanamori(GK)规则的180°铁磁超交换相互作用。

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  • 来源
    《Journal of Applied Physics 》 |2013年第23期| 234101.1-234101.7| 共7页
  • 作者单位

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083, China;

    National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China,National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

    Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China,National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083, China;

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