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机译:由三角形GaAsSb势垒分隔的垂直相关的InAs和GaAsSb量子点的组合
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece;
Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
Institute of Physics AS CR, v. v. i., Cukrovarnickd 10, 162 00, Prague 6, Czech Republic;
机译:由三角形GaAsSb势垒分隔的垂直相关的InAs和GaAsSb量子点的组合
机译:Gaassb结构特性对INAS / Gaassb量子点光学性质的影响
机译:GaAsSb包覆层中应力松弛对在GaAs(001)上生长的InAs / GaAsSb结构中量子点产生的影响
机译:Gaassb覆层层对INAS / Gaassb量子点光学性质的影响
机译:用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
机译:通过InAlAs中间层改变GaAsSb封盖的InAs量子点的光学性质
机译:II型Inas / Gaassb / Gaas量子点作为人工量子点 分子