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机译:InAs / AlSb / GaSb量子阱异质结中的二维至三维隧穿
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA;
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA;
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA;
机译:新型GaSb / AlSb / GaSb / AlSb / InAs / AlSb / InAs三势垒带间隧穿二极管
机译:非弹性散射对GaSb / AlSb / InAs / GaSb / AlSb / lnAs断裂间隙带间隧穿结构中带间隧穿的影响
机译:GaSb / AlSb / GaSb / AlSb / InAs双势垒带间隧穿结构中的阱影响和势垒厚度研究
机译:InAs层对GaSb / AlSb / GaSb / AlSb / InAs双势垒共振带间隧穿结构的负微分电阻行为的影响
机译:新型InAs / AlSb / GaSb共振带间隧穿结构的物理学。
机译:基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
机译:通过晶圆键合在al2O3衬底上制备Inas / alsb / Gasb异质结双极晶体管
机译:Gasb-alsb-Inas量子阱结构中的磁致激发。 (重新公布新的可用性信息)