机译:在松弛的Si_(0.73)Ge_(0.27)外延层上形成锗锗硅的过程中,SiGe合金中的横向Ge偏析和应变演化
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China;
机译:一种新颖的三层梯度SiGe应变弛豫缓冲器,可实现高质量晶体并外延生长应变Si_(0.5)Ge_(0.5)层
机译:Si_(0.16)Ge_(0.84)/ Ge_(0.94)Sn_(0.06)/ Si_(0.16)Ge_(0.84)的弛豫Si_(0.10)Ge_(0.90)Ⅰ型量子阱上的波函数工程和吸收谱
机译:超薄非晶硅层,用于应变松弛Si_(0.75)Ge_(0.25)合金层的生长
机译:多个时段应变补偿Si / Si_(0.2)Ge_(0.8)量子阱和通过MBE种植的级联结构在弛豫Si_(0.5)Ge_(0.5)缓冲层上
机译:富镍镍钛合金的相变:应变率,温度,热机械处理和镍成分对形状记忆和超弹性特征的影响。
机译:两种应变率下镍基合金625的变形行为微观结构和故障机理的比较
机译:第一性原理在Si / Si_(1_x)Ge_(x)异质结构和Si_(1-x)Ge_(x)合金中与电子有关的热电特性
机译:siGe外延层应变松弛初始阶段的倒易空间分析