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机译:在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi,Amagasaki, Hyogo 661-8661, Japan;
机译:在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
机译:通过在高温下退火4H-SiC外延层将基面位错转换为螺纹边缘位错
机译:通过高温退火将4H-SiC外延层中的基面位错转换为螺纹边缘位错
机译:通过在高温下退火4H-SiC脱垂基底平面脱位转换到穿线边缘位错
机译:用于稳定双极二极管的4H-碳化硅的低基面位错密度外延层的生长。
机译:4H-SiC 100 mm PVT生长过程中基面位错密度和热机械应力分析
机译:4H-siC外延层中高温退火后基面位错的后生长减少
机译:螺纹螺纹和刃口位错对4H-siC同质外延层输运性能的影响