Recombination dynamics in single GaAs-nanowires with an axial heterojunction: n- versus p-doped areas

摘要

The recombination dynamics of vapor-liquid-solid grown GaAs-nanowires with an axial p-n heteroj unction is investigated by spatially and time-resolved photoluminescence spectroscopy. By scanning across the doping transition of single p-n and n-p doped nanowires, respectively, the particular influence of surface losses in differently doped areas is studied. We found a significantly reduced non-radiative recombination for the n-doped region compared to the p-doped one, which can be attributed to suppressed surface losses because of the characteristic band bending at the surface.