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机译:利用Au / ZnO纳米棒肖特基二极管的I-V-T特性对界面陷阱和势垒不均匀性进行系统研究
Department of Science and Technology, Campus Norrkoping, Linkoping University,SE-60174 Norrkoping, Sweden;
Department of Science and Technology, Campus Norrkoping, Linkoping University,SE-60174 Norrkoping, Sweden;
Department of Science and Technology, Campus Norrkoping, Linkoping University,SE-60174 Norrkoping, Sweden;
Department of Science and Technology, Campus Norrkoping, Linkoping University,SE-60174 Norrkoping, Sweden;
Department of Science and Technology, Campus Norrkoping, Linkoping University,SE-60174 Norrkoping, Sweden;
机译:利用Mo / 4H肖特基二极管的I-V-T特性研究势垒不均匀性
机译:在Au / GaN纳米棒界面中的肖特基屏障的不均匀性介导的系统减少
机译:电导和电容法表征Au-ZnO纳米棒肖特基二极管的界面陷阱和电性能
机译:陷阱对Au / n-InP肖特基势垒二极管I-V-T特性的影响
机译:陷阱对硒肖特基势垒二极管电容的影响
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:利用Au / ZnO纳米棒肖特基二极管的I-V-T特性对界面陷阱和势垒不均匀性进行系统研究