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机译:声子对高AlN摩尔分数的AlN和Al_xGa_(1-x)N合金带隙的温度依赖性的影响
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
Department of Electrical Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA;
机译:声子对高AlN摩尔分数的AlN和Al
机译:通过金属有机气相外延生长的高AlN摩尔分数Al_xGa_(1-x)N多量子阱的阱层中的适当Si掺杂来减少阳离子空位浓度
机译:具有InGaN背势垒的Al_xGa_(1-x)N / AlN / GaN高电子迁移率晶体管的摩尔内分数和层厚度的数值优化
机译:Al Mole分数对AL_XGA_(1-X)N / GAN HEMTS微波噪声性能的影响
机译:纳米Al2O3或AlN颗粒和微米Al 2O3纤维增强镁合金AM60基混合纳米复合材料的开发
机译:GaN / AlN纳米线超晶格中的声子声子模和声子带隙
机译:alN(1-x)px合金的异常带隙弯曲
机译:alN带隙温度对其光学特性的依赖性。