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机译:InP衬底上生长的电信频段InAs量子点和虚线中与温度相关的载流子动力学
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan,Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE Albuquerque, New Mexico 87106, USA;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE Albuquerque, New Mexico 87106, USA;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE Albuquerque, New Mexico 87106, USA;
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
机译:来自包含厚量子点的InAs(P)/ InP多层膜的光致发光光谱的温度依赖性:点尺寸依赖的载流子动力学
机译:基于INAS / INP量子划线的载体传导机制和基于基于P-IN激光异质结构的载波传导机制和INAS / GAAS量子点的研究
机译:带有分子束外延的InP上生长的InAs量子点在电信带中的单光子发射
机译:在室温和高工作温度焦平面阵列中运行的INP基板上生长的高性能INAS量子点红外光电探测器
机译:量子点和砷化镓基量子点级联激光器中的载流子动力学。
机译:通过MOCVD在300mm GE缓冲的Si(001)衬底上产生的o频带Qualtum Dots
机译:InP衬底上生长的电信频段InAs量子点和虚线中与温度相关的载流子动力学