机译:Si掺杂的Al_xGa_(1-x)N / Al_yGa_(1-y)N多量子阱结构(x = 0.6)中结构不均匀性的Si浓度依赖性及其与内部量子效率的关系
Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan;
Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan;
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan;
Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan;
机译:Si掺杂的Al
机译:掺Si的Al_xGa_(1-x)N / Al_yGa_(1-y)N多量子阱有源区的紫外发光二极管的复合动力学
机译:通过扩散电阻显微镜对Al_xGa_(1-x)N / Al_yGa_(1-y)N多量子阱异质结构的电子性质进行纳米级可视化
机译:Si-掺杂的Al_xga_(1-x)n / al_yga_(1-y)n的光学性质(x = 0.24-0.53,y = 0.11)多量子阱结构
机译:金属有机气相外延生长过程中In(x)Ga(1-x)N / In(y)Ga(1-y)N多量子阱结构的稳定性
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:Si掺杂\ ud中结构不均匀性的Si浓度依赖性 Al_xGa_1-_xN / Al_yGa_1-_yN多量子阱结构(x = 0.6)及其与内部量子效率的关系
机译:Inas(1-x)sb(x)/ In(1-y)Ga(y)作为多量子阱异质结构设计用于改进的4-5微米激光器