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首页> 外文期刊>Journal of Applied Physics >Dynamic magnetostrictive properties of magnetization-graded ferromagnetic material and application in magnetoelectric composite
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Dynamic magnetostrictive properties of magnetization-graded ferromagnetic material and application in magnetoelectric composite

机译:磁化梯度铁磁材料的动态磁致伸缩性能及其在磁电复合材料中的应用

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摘要

This paper investigates the dynamic magnetostrictive properties in a laminate ferromagnetic material FeCuNbSiB/Ni (FN) consisting of a Nickel (Ni) plate and the Fe-based nanocrystalline alloy (FeCuNbSiB) foils. The resonant dynamic piezomagnetic coefficient (d_(33,m)) is studied particularly in experiments. The experimental results demonstrate that the d_(33,m) versus DC bias magnetic field data of FN show strong hysteretic and remanent behaviors. The zero-biased d_(33,m) ranges from 5.14 to 42.7 (nm/A), depending on the numbers of FeCuNbSiB layer L. The maximum zero-biased d_(33,m) of FN is 42.7 nm/A for FN with L = 4, which is ~24.1 times larger than that of Ni. By combining FN with piezoelectric Pb(Zr_(0.52),Ti_(0.48))O_3 (PZT), a giant zero-biased magnetoelectric voltage coefficient α_(ME) of ~89.2 (V/cm Oe) is observed in composite FN/PZT/FN. Thus, the laminate magnetostrictive layer FN can be used for obtaining a self-biased magnetoelectric composite.
机译:本文研究了由镍(Ni)板和铁基纳米晶合金(FeCuNbSiB)箔组成的铁磁材料FeCuNbSiB / Ni(FN)的动态磁致伸缩性能。特别是在实验中研究了共振动态压电系数(d_(33,m))。实验结果表明FN的d_(33,m)与DC偏置磁场数据表现出很强的磁滞和剩磁行为。零偏d_(33,m)的范围为5.14至42.7(nm / A),具体取决于FeCuNbSiB层L的数量。FN的最大零偏d_(33,m)对FN为42.7 nm / A L = 4,是Ni的24.1倍。通过将FN与压电Pb(Zr_(0.52),Ti_(0.48))O_3(PZT)结合,在复合FN / PZT中观察到了约89.2(V / cm Oe)的巨大零偏磁电电压系数α_(ME)。 / FN。因此,层压磁致伸缩层FN可用于获得自偏置的磁电复合材料。

著录项

  • 来源
    《Journal of Applied Physics》 |2014年第3期|17C726.1-17C726.3|共3页
  • 作者单位

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

    Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044. China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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