Analysis of the electrical properties of Cr-BaSi_2 Schottky junction and n-BaSi_2/p-Si heterojunction diodes for solar cell applications

摘要

Current status and future prospects towards BaSi_2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi_2 homojunction diodes, diodes with a Cr-BaSi_2 Schottky junction and an n-BaSi_2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi_2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V_D, was 0.53 V in the Cr-BaSi_2 Schottky junction diode, and the Schottky barrier height was 0.73 eV calculated from the thermoionic emission theory; the V_D was about 1.5 V in the n-BaSi_2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi_2 and the p-Si.