机译:氩气掺混物对直流磁控溅射Sc_xAl_(1-x)N薄膜c轴取向生长的影响
Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7,1040 Vienna, Austria;
Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8,1040 Vienna, Austria;
University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10/052, 1040 Vienna, Austria;
Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13,1040 Vienna, Austria;
Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7,1040 Vienna, Austria;
Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7,1040 Vienna, Austria;
机译:c轴取向和scan浓度对磁控溅射Sc_xAl_(1-x)N薄膜的红外激活模式的影响
机译:高功率脉冲磁控溅射和直流磁控溅射技术沉积的低电阻率Ru_(1-x)Ti_xO_2薄膜
机译:直流磁控溅射与高功率脉冲磁控溅射工艺在不同惰性气体条件下生长CNX薄膜的比较研究
机译:优选的C轴取向光致发光ZnO薄膜通过RF磁控溅射制备
机译:磁控溅射薄膜生长过程中的脉冲偏置。
机译:直流反应磁控溅射制备纳米结构多孔ZnO薄膜的表面性能
机译:直流磁控溅射与大功率脉冲磁控溅射工艺在不同惰性气体条件下CNX薄膜生长的比较研究