Impact of trap localization on low-frequency noise in nanoscale device

摘要

The impact of oxide trap localization concerning low-frequency noise has been investigated for nanoscale field effect transistors. Various low-frequency noise behaviors induced by uniformlyon-uniformly distributed gate oxide traps have been estimated using Monte-Carlo simulation and compared to experimental data. The noise level and variability are affected by the trap concentration and the channel area for uniformly distributed traps. Localized oxide traps induce different corner frequencies and noise variability according to the mean location and the standard deviation of traps.