Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates

摘要

We demonstrate ～2.1-2.2 eV In_yGa_(1-y)P (y = 0.18-0.30) solar cells on GaP substrates for potential use in future high-efficiency multi-junction solar cells. Due to increased direct absorption compared to GaP, the In_yGa_(1-y)P solar cells exhibited much higher short-circuit current density than indirect gap GaP solar cells with only a slight decrease in open-circuit voltage. As such, the In_yGa_(1-y)P solar cells presented here possessed higher efficiency than comparable GaP solar cells. By taking advantage of strong direct-gap absorption, we believe that metamorphic In_yGa_(1-y)P will be an ideal top cell material for future multi-junction devices.