Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

摘要

We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10~(17)cm~(-3). The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.