Role of substrate temperature at graphene synthesis in an arc discharge

摘要

The substrate temperature required for synthesis of graphene in an arc discharge plasma was studied. It was shown that an increase of copper substrate temperature up to the melting point leads to an increase in the amount of graphene production and the quality of graphene sheets. Favorable range of substrate temperatures for arc-based graphene synthesis was determined, and it is in a relatively narrow range of about 1210-1340 K.