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首页> 外文期刊>Journal of Applied Physics >Electronic and magnetic properties of off-stoichiometric Co_2Mn_β Si/MgO interfaces studied by x-ray magnetic circular dichroism
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Electronic and magnetic properties of off-stoichiometric Co_2Mn_β Si/MgO interfaces studied by x-ray magnetic circular dichroism

机译:X射线磁性圆二色性研究非化学计量比的Co_2Mn_βSi / MgO界面的电子和磁性

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摘要

We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the Co_2Mn_β Si (CMS)/MgO (β = 0.69, 0.99, 1.15, and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition (β) dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, m_(spin)(Mn), derived from x-ray magnetic circular dichroism weakly decreased with increasing Mn composition β in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, m_(spin)(Co), also weakly decreased with increasing Mn composition. This behavior was consistently explained by the antisite-based SSFU model, in particular, by the decrease in the concentration of Co_(Mn) antisites detrimental to the half-metallicity of CMS with increasing β. This finding is consistent with the higher tunnel magnetoresistance ratios which have been observed for CMS/MgO/CMS MTJs with Mn-rich CMS electrodes.
机译:我们已经通过X射线磁学研究了Co_2Mn_βSi(CMS)/ MgO(β= 0.69、0.99、1.15和1.29)磁性隧道结(MTJ)界面处Co和Mn原子的电子和磁态圆二色性。特别地,研究了Mn和Co磁矩的Mn组成(β)依赖性。在从缺锰到富锰的CMS膜中,随着Mn组成β的增加,源于x射线磁性圆二色性的Mn,m_(spin)(Mn)的实验自旋磁矩微弱地减小。通过基于基于反位点的位点特定配方单元(SSFU)组成模型的第一原理计算来解释此行为,该模型假定仅形成反位点缺陷,而不形成空位,以适应化学计量失调。此外,随着Mn含量的增加,Co的实验自旋磁矩m_(spin)(Co)也微弱降低。这种行为被基于抗位点的SSFU模型一致地解释,尤其是随着β的增加,对CMS半金属性有害的Co_(Mn)抗位点浓度的降低。这一发现与具有富锰CMS电极的CMS / MgO / CMS MTJ所观察到的更高的隧道磁阻比一致。

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  • 来源
    《Journal of Applied Physics》 |2015年第20期|203901.1-203901.6|共6页
  • 作者单位

    Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan,Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA;

    Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan,Department of Physics, Madanapalle Institute of Technology and Science, Angallu, Madanapalle 517325, Andra Pradesh, India;

    Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Photon Factory, IMSS, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan;

    Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan,Mathematical and Physical Science, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan;

    Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

    Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan,Corporate R & D Center, Toshiba Corp., Kawasaki 212-8582, Japan;

    Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan,School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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